Congratulations! We are happy to announce that part number 21049355-101 with NSN 5962013584069 is now available in stock. It is listed as Microcircuit Memory with CAGE code 81395 and FSC 5962 Microcircuits Electronic is manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Are you interested in getting a quick quote for this part?
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| Part Number: 21049355-101 | Item Name: Microcircuit Memory | NSN: 5962-01-358-4069 (5962013584069) | NIIN : 013584069 |
| CAGE Code: 81395 | FSC: FSC 5962 Microcircuits Electronic | Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor | |
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There is a label on the national stock number (NSN) part, which indicates procurement, storage, stocking, and issuance from the federal supply system. These parts play an important role in the military and defense logistics supply chain.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-358-4069 Item Description: Microcircuit Memory | 5962 | 013584069 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 21049355-101 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-40 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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