Congratulations! We are happy to announce that part number 9966-CDFB with NSN 5962013317924 is now available in stock. It is listed as Microcircuit Memory with CAGE code K0656 and FSC 5962 Microcircuits Electronic is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. Are you interested in getting a quick quote for this part?
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| Part Number: 9966-CDFB | Item Name: Microcircuit Memory | NSN: 5962-01-331-7924 (5962013317924) | NIIN : 013317924 |
| CAGE Code: k0656 | FSC: FSC 5962 Microcircuits Electronic | Manufacturer: Bae Systems Operations Limited Dba Bae Systems Plc | |
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There is a label on the national stock number (NSN) part, which indicates procurement, storage, stocking, and issuance from the federal supply system. These parts play an important role in the military and defense logistics supply chain.
To know more about this NSN part 9966-CDFB, please call us at +1-714-705-4780 or send us your Bill of Materials (BOM) via email at sales@unlimitedpurchasing.com.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-331-7924 Item Description: Microcircuit Memory | 5962 | 013317924 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 9966-Cdfb | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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